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%ما هو (من)٪ 1 - تعريف
SEMICONDUCTOR MEMORY THAT USES FLIP-FLOPS TO STORE EACH BIT
Static RAM; S-RAM; Static Random Access Memory; SRAM latency; RSNM; Read static noise margin; Static random access memory; Static storage; ESRAM; 6T SRAM; 6T SRAM cell; 6T RAM cell
.svg?width=200 "Four-transistor SRAM provides advantages in density at the cost of manufacturing complexity. The resistors must have small dimensions and large values.")
.svg?width=200 "A six-transistor CMOS SRAM cell. WL: word line. BL: bit line.")
![die]] of a STM32F103VGT6 [[microcontroller]] as seen by a [[scanning electron microscope]]. Manufactured by [[STMicroelectronics]] using a 180-[[nanometre]] process. Topology of the cells is clearly visible.](https://commons.wikimedia.org/wiki/Special:FilePath/STM32-SEM-HD.jpg?width=200 "die]] of a STM32F103VGT6 [[microcontroller]] as seen by a [[scanning electron microscope]]. Manufactured by [[STMicroelectronics]] using a 180-[[nanometre]] process. Topology of the cells is clearly visible.")
static random-access memory
<storage> (SRAM) Random-access memory in which each bit of
storage is a bistable flip-flop, commonly consisting of
cross-coupled inverters. It is called "static" because it
will retain a value as long as power is supplied, unlike
dynamic random-access memory (DRAM) which must be regularly
refreshed. It is however, still volatile, i.e. it will lose
its contents when the power is switched off, in contrast to
ROM.
SRAM is usually faster than DRAM but since each bit requires
several transistors (about six) you can get less bits of SRAM
in the same area. It usually costs more per bit than DRAM and
so is used for the most speed-critical parts of a computer
(e.g. cache memory) or other circuit.
(1995-04-22)
static RAM
MDRAM
![[[MoSys]] MDRAM MD908](https://commons.wikimedia.org/wiki/Special:FilePath/MoSys MD908.png?width=200 "[[MoSys]] MDRAM MD908")
![1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]](https://commons.wikimedia.org/wiki/Special:FilePath/Olivetti JP90 - Toshiba TC518129CFWL-80 on controller-8514.jpg?width=200 "1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]")
![NMOS]] DRAM cell. It was patented in 1968.](https://commons.wikimedia.org/wiki/Special:FilePath/Original 1T1C DRAM design.svg?width=200 "NMOS]] DRAM cell. It was patented in 1968.")
![die]] of a Samsung DDR-SDRAM 64MBit package](https://commons.wikimedia.org/wiki/Special:FilePath/SAMSUNG@DDR-SDRAM@64MBit@K4D62323HA-QC60 Stack-DSC03539-DSC03556 - ZS-DMap.jpg?width=200 "die]] of a Samsung DDR-SDRAM 64MBit package")
![A 512 MBit [[Qimonda]] GDDR3 SDRAM package](https://commons.wikimedia.org/wiki/Special:FilePath/Sapphire Ultimate HD 4670 512MB - Qimonda HYB18H512321BF-10-93577.jpg?width=200 "A 512 MBit [[Qimonda]] GDDR3 SDRAM package")
RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT
DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM
Multibank Dynamic Random Access Memory (Reference: RAM, DRAM, IC)
ويكيبيديا
Static random-access memory
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed.
The term static differentiates SRAM from DRAM (dynamic random-access memory) — SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed. SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost; it is typically used for the cache and internal registers of a CPU while DRAM is used for a computer's main memory.
